검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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Department of Energy and Materials Engineering, Dongguk University, 30 Pildong‐
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Department of Energy and Materials Engineering, Dongguk University, 30 Pildong‐
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Department of Energy and Materials Engineering, Dongguk University, 30 Pildong‐
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Department of Energy and Materials Engineering, Dongguk University, 30 Pildong‐
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Graduate Institute of Applied Physics and Department of Physics, National Taiwan University;
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University;
Department of Physics, National Tsing Hua University;
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University;
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University;
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University;
Graduate Institute of Applied Physics and Department of Physics, National Taiwan University;
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Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices
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Integrated Photonic Processor Implementing Digital Image Convolution
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Chensheng Wang;
Wenhao Wu;
Zhenhua Wang;
Zhijie Zhang;
Wei Xiong;
Leimin Deng;
Huazhong Institute of Electro-Optics, Wuhan 430299, China;
Huazhong Institute of Electro-Optics, Wuhan 430299, China;
Huazhong Institute of Electro-Optics, Wuhan 430299, China;
Huazhong Institute of Electro-Optics, Wuhan 430299, China;
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China;
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