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Investigation of the effect of the alloy 600 substrate for the stability of a Ni<sub>3</sub>Sn<sub>2</sub> coating for metal dusting protection at 620<sup>o</sup>C
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The ideal doping concentration of silicon wafer for single junction hybrid n-Si /PEDOT: PSS solar cells with 3.2% elevated PCE and Voc of 620 mV
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Fang, Wenzhong;
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Effect of Mg codoping on Eu3+ luminescence in GaN grown by ammonia molecular beam epitaxy
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Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology 2 , Toyohashi, Aichi 441-8580, Japan;
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology 2 , Toyohashi, Aichi 441-8580, Japan;
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology 2 , Toyohashi, Aichi 441-8580, Japan;
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology 2 , Toyohashi, Aichi 441-8580, Japan;
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