검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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11
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Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors
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Roh, I.P.;
Kim, S.H.;
Song, Y.H.;
Song, J.D.;
;
(Current applied physics : the official journal of the Korean Physical Society,
v.17,
2017,
pp.417-421)
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12
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Amorphous TiAl films for micromirror arrays with stable analog deflection integrated on complementary metal oxide semiconductors
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Schmidt, Jan-Uwe;
;
(Journal of Micro/nanolithography, MEMS, and MOEMS : JM<SUP>3</SUP>,
v.7,
2008,
pp.021012)
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13
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Thermodynamic considerations in the stability of binary oxides for alternative gate dielectrics in complementary metal-oxide-semiconductors
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Stemmer, Susanne;
;
(Journal of vacuum science & technology. processing, measurement, and phenomena : an official journal of the American Vacuum Society. B, Microelectronics and nanometer structures,
v.22,
2004,
pp.791)
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14
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Thick detection zone single-photon avalanche diode fabricated in 0.35 μ m complementary metal-oxide semiconductors
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Steindl, Bernhard;
Enne, Reinhard;
Zimmermann, Horst;
;
(Optical engineering : the journal of the Society of Photo-optical Instrumentation Engineers,
v.54,
2015,
pp.050503)
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15
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Performance Analysis of Wide AND OR Structures Using Keeper Architectures in Various Complementary Metal Oxide Semiconductors Technologies
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Anusha, N;
Sasilatha, T;
Department of Electronics and Communication Engineering, S.A. Engineering College, Anna University, Chennai 600077, India;
Department of Electronics and Communication Engineering, Sree Sastha Institute of Engineering and Technology, Anna University, Chennai 600123, India;
(Journal of computational and theoretical nanoscience,
v.13,
2016,
pp.6999-7008)
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16
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Scalable High-Speed Hybrid Complementary Integrated Circuits based on Solution-Processed Organic and Amorphous Metal Oxide Semiconductors
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Watanabe Shun;
Wei Xiaozhu;
Kumagai Shohei;
Makita Tatsuyuki;
Tsuzuku Kotaro;
Yamamura Akifumi;
Sasaki Mari;
Takeya Jun;
University of Tokyo;
University of Tokyo;
The University of Tokyo;
University of Tokyo;
University of Tokyo;
University of Tokyo;
University of Tokyo;
University of Tokyo;
(,
v.,
2021,
)
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17
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Novel Oxygen Free Titanium Silicidation (OFS) Processing for Low Resistance and Thermally Stable SALICIDE (Self-Aligned Silicide) in Deep Submicron Dual Gate CMOS (Complementary Metal-Oxide Semiconductors)
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Kotaki, Hiroshi;
Nakano, Masayuki;
Hayashida, Shigeki;
Kakimoto, Seizou;
Mitsuhashi, Katsunori;
Takagi, Junkou;
;
(Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers,
v.34,
1995,
pp.776-781)
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18
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A low power 10‐bit 1 MS/s cyclic analog to digital converter for complementary metal oxide semiconductors image sensors with comparator‐based switched‐capacitor technique
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Zhang, Ziyang;
Nie, Kaiming;
Fang, Dongxing;
Xu, Jiangtao;
School of Microelectronics Tianjin University Tianjin China;
School of Microelectronics Tianjin University Tianjin China;
School of Microelectronics Tianjin University Tianjin China;
School of Microelectronics Tianjin University Tianjin China;
(International journal of circuit theory and applications,
v.52,
2024,
pp.5972-5988)
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19
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New Source Heterojunction Structures with Relaxed/Strained Semiconductors for Quasi-Ballistic Complementary Metal-Oxide-Semiconductor Transistors: Relaxation Technique of Strained Substrates and Design of Sub-10 nm Devices
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Mizuno, Tomohisa;
Mizoguchi, Naoki;
Tanimoto, Kotaro;
Yamauchi, Tomoaki;
Hasegawa, Mitsuo;
Sameshima, Toshiyuki;
Tezuka, Tsutomu;
;
(Japanese journal of applied physics,
v.49,
2010,
pp.04DC13)
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20
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Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)-Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
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Kotaki, Hiroshi;
Takegawa, Yoshiyuki;
Mori, Yukiko;
Mitsuhashi, Katsunori;
Takagi, Junkou;
;
(Japanese journal of applied physics. Part 1, Regular papers, short notes and review papers,
v.33,
1994,
pp.532-540)