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281
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Competing influence of an in-plane electric field on the Stark shifts in a semiconductor quantum dot
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University of Tokyo 1 NanoQuine, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
University of Tokyo 1 NanoQuine, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
University of Tokyo 1 NanoQuine, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
University of Tokyo 1 NanoQuine, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
University of Tokyo 1 NanoQuine, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
University of Tokyo 1 NanoQuine, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
University of Tokyo 1 NanoQuine, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
University of Tokyo 1 NanoQuine, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan;
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UV/Ozone-assisted bonding for InAs/GaAs quantum dot lasers on Si
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Spectroscopic study of the 4f<sup>7</sup>6s<sup>2</sup><sup>8</sup><i>S</i>7/2∘ - 4f<sup>7</sup>(<sup>8</sup>S<sup>°</sup>) 6s6p(<sup>1</sup>P<sup>°</sup>) <sup>8</sup>P<sub>5/2,7/2</sub> transitions in neutral europium-151 and europium-153: absolute frequency and hyperfine structure
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Experimental study of mobility in [110]- and [100]-directed multiple silicon nanowire GAA MOSFETs on (100) SOI
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Growth of InGaAs/GaAs nanowire-quantum dots on AlGaAs/GaAs distributed Bragg reflectors for laser applications
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Tatebayashi, J.;
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Ho, J.;
Ota, Y.;
Iwamoto, S.;
Arakawa, Y.;
NanoQUINE, the University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;
NanoQUINE, the University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;
Institute of Industrial Science, the University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;
NanoQUINE, the University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;
NanoQUINE, the University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;
NanoQUINE, the University of Tokyo, 4-6-1, Komaba, Meguro-ku, Tokyo 153-8505, Japan;
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