검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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- Elevated Polycide Source/Drain Shallow Junctions with Advanced Silicidation Processing and Al Plug/Collimated PVD (Physical Vapor Deposition)-Ti/TiN/Ti/Polycide Contact for Deep-Submicron Complementary Metal-Oxide Semiconductors
- Kotaki, H.; Takegawa, Y.; Mori, Y.; Mitsuhashi, K.; ; (Solid state devices and materials, v.1994, 1994, pp.532-540)
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22
- A 2.72 μs row conversion time 11‐bit column‐parallel single‐slope analog to digital converter with differential‐clocks‐assisted time to digital converter interpolation for complementary metal oxide semiconductors image sensor
- Duan, Hao; Nie, Kaiming; Xu, Jiangtao; School of Microelectronics Tianjin University Tianjin China; School of Microelectronics Tianjin University Tianjin China; School of Microelectronics Tianjin University Tianjin China; (International journal of circuit theory and applications, v.52, 2024, pp.6056-6072)
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23.
- 알코올 기반 액체 신틸레이터에서 형광 이미지 분석 및 입자 상호 작용 시뮬레이션
- 최지영
- 전남대학교, 국내박사, 243, 2021
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24
- Exploring Terahertz COMPLEMENTARY METAL OXIDE SEMICONDUCTOR Integrated Circuits: Advancements and Obstacles
- NOORI Abbas b; ; (INTERNATIONAL JOURNAL OF MULTIDISCIPLINARY RESEARCH AND ANALYSIS, v.07, 2024, )
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25
- Complementary Metal Oxide Semiconductor Technology With and On Paper
- Martins, Rodrigo; Nathan, Arokia; Barros, Raquel; Pereira, Luí s; Barquinha, Pedro; Correia, Nuno; Costa, Ricardo; Ahnood, Arman; Ferreira, Isabel; Fortunato, Elvira; Departamento de Ciê ncia dos Materiais, CENIMAT/I3N, Faculdade de Ciê ncias e Tecnologia, FCT, CEMOP/Uninova, Universidade Nova de Lisboa, 2829‐ 516 Caparica, Portugal; Departamento de Ciê ncia dos Materiais, CENIMAT/I3N, Faculdade de Ciê ncias e Tecnologia, FCT, CEMOP/Uninova, Universidade Nova de Lisboa, 2829‐ 516 Caparica, Portugal; Departamento de Ciê ncia dos Materiais, CENIMAT/I3N, Faculdade de Ciê ncias e Tecnologia, FCT, CEMOP/Uninova, Universidade Nova de Lisboa, 2829‐ 516 Caparica, Portugal; Departamento de Ciê ncia dos Materiais, CENIMAT/I3N, Faculdade de Ciê ncias e Tecnologia, FCT, CEMOP/Uninova, Universidade Nova de Lisboa, 2829‐ 516 Caparica, Portugal; Departamento de Ciê ncia dos Materiais, CENIMAT/I3N, Faculdade de Ciê ncias e Tecnologia, FCT, CEMOP/Uninova, Universidade Nova de Lisboa, 2829‐ 516 Cap; (Advanced materials, v.23, 2011, pp.4491-4496)
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26
- High-Mobility Tellurium Thin-Film Transistor: Oxygen Scavenger Effect Induced by a Metal-Capping Layer
- Seung-Min Lee; Seong Cheol Jang; Ji-Min Park; Jaewon Park; Nayoung Choi; Kwun-Bum Chung; Jung Woo Lee; Hyun-Suk Kim; Department of Materials Science and Engineering, Chungnam National University, Daejeon 34134, Republic of Korea; Department of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of Korea; Department of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of Korea; Department of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of Korea; Department of Physics, Dongguk University, Seoul 04620, Republic of Korea; Department of Physics, Dongguk University, Seoul 04620, Republic of Korea; School of Materials Science and Engineering, Pusan National University, Busan 46241, Republic of Korea; Department of Energy and Materials Engineering, Dongguk University, Seoul 04620, Republic of Korea; (Nanomaterials, v.15, 2025, pp.418-418)
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27
- Spintronics in GaN‐Based Semiconductors: Research Progress, Challenges and Perspectives
- Li Hangtian; Zhu Miaodong; Guo Zhonghong; Li Guoxin; Shang Jianbo; Yang Ying; Feng Yikang; Lu Yunshu; Zhang Qian; Wang Sheng; Li Zexi; Jiang Qinglong; Lin Xiaowei; Gao Fangliang; Li Shuti; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices School of Semiconductor Science and Technology South China Normal University Guangzhou 510631 China; (Advanced Materials Technologies, v., 2024, )
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28
- Different digital imaging techniques in dental practice
- Lač ević , Amela; Vranić , Edina; ; (Bosnian journal of basic medical sciences, v.4, 2004, pp.37-40)
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29
- Recent Advances of Solution-Processed Metal Oxide Thin-Film Transistors
- Xu, Wangying; Li, Hao; Xu, Jian-Bin; Wang, Lei; Department of Electronic Engineering, Materials Science and Technology Research Center , The Chinese University of Hong Kong , Shatin New Town , Hong Kong SAR 999077 , China; Department of Electronic Engineering, Materials Science and Technology Research Center , The Chinese University of Hong Kong , Shatin New Town , Hong Kong SAR 999077 , China; (ACS applied materials & interfaces, v.10, 2018, pp.25878-25901)
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30.
- 고체 전해질 게이트 절연체가 적용된 하이브리드 박막 트랜지스터 기반 저전압 상보성 동작 회로에 관한 연구
- 조일영
- 부경대학교, 국내석사, vii, 50장, 2019
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