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331
- High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics
- Na, Jong H.; Kitamura, M.; Lee, D.; Arakawa, Y.; University of Tokyo Research Center for Advanced Science and Technology, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan and Institute of Industrial Science, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan; University of Tokyo Research Center for Advanced Science and Technology, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan and Institute of Industrial Science, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan; University of Tokyo Research Center for Advanced Science and Technology, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan and Institute of Industrial Science, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan; University of Tokyo Research Center for Advanced Science and Technology, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan and Institute of Industrial Science, , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan; (Applied physics letters, v.90, 2007, pp.163514)
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332
- Direct measurements, analysis, and post-fabrication improvement of noise margins in SRAM cells utilizing DMA SRAM TEG
- Suzuki, M.; Saraya, T.; Shimizu, K.; Nishida, A.; Kamohara, S.; Takeuchi, K.; Miyano, S.; Sakurai, T.; Hiramoto, T.; ; (VLSI Technology (VLSIT), 2010 Symposium on, v.2010, 2010, pp.191-192)
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333
- Parallel nonvolatile programming of power-up states of SRAM cells
- Hiramoto, Toshiro; Mizutani, Tomoko; Takeuchi, Kiyoshi; Kobayashi, Masaharu; Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo, 153-8505, Japan; Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo, 153-8505, Japan; Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo, 153-8505, Japan; Institute of Industrial Science, the University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo, 153-8505, Japan; (ASIC (ASICON), 2017 IEEE 12th International Conference on, v.2017, 2017, pp.418-421)
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334
- <b><i>Marketing and Outreach for the Academic Library: New Approaches and Initiatives.</i></b> Bradford Lee Eden, ed. Lanham, Md.: Rowman & Littlefield, 2016. 153p. Paper, $45.00 (ISBN 978-1-4422-6254-6). LC 2016000813.
- Wilson, Laura; ; (College & research libraries, v.78, 2017, pp.122-124)
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335
- Surface diffusion processes in molecular beam epitaxial growth of GaAs and AlAs as studied on GaAs (001)-(111)<i>B</i> facet structures
- Koshiba, S.; Nakamura, Y.; Tsuchiya, M.; Noge, H.; Kano, H.; Nagamune, Y.; Noda, T.; Sakaki, H.; Quantum Wave Project, JRDC, Park Bldg. 4F 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan; Quantum Wave Project, JRDC, Park Bldg. 4F 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan; Quantum Wave Project, JRDC, Park Bldg. 4F 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan; Quantum Wave Project, JRDC, Park Bldg. 4F 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan; Quantum Wave Project, JRDC, Park Bldg. 4F 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan; Quantum Wave Project, JRDC, Park Bldg. 4F 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan; Quantum Wave Project, JRDC, Park Bldg. 4F 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan; Quantum Wave Project, JRDC, Park Bldg. 4F 4-7-6 Komaba, Meguro-ku, Tokyo 153, Japan; (Journal of applied physics, v.76, 1994, pp.4138-4144)
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336
- Nondegenerate pump and probe spectroscopy in InGaN thin films
- Nomura, Masahiro; Arita, Munetaka; Arakawa, Yasuhiko; Ashihara, Satoshi; Kako, Satoshi; Nishioka, Masao; Shimura, Tsutomu; Kuroda, Kazuo; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan; (Journal of applied physics, v.94, 2003, pp.6468-6471)
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337
- Advanced Light Trapping for Hot-Carrier Solar Cells
- Giteau, Maxime; Collin, Stephane; Jehl, Zacharie; Suchet, Daniel; Guillemoles, Jean-Francois; Okada, Yoshitaka; ; (Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on, v.2018, 2018, pp.1800-1805)
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338
- Thickness dependence of transient absorption spectrum for InGaN thin films
- Nomura, M.-S.; Arita, M.; Ashihara, S.; Kako, S.; Nishioka, M.; Arakawa, Y.; Shimura, T.; Kuroda, K.; Institute of Industrial Science, University of Tokyo, 4-6-1 Komagba, Meguro-ku, Tokyo 153-8505, Japan; Research Center for Advanced Science and Technology, University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8904, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komagba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komagba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komagba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komagba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komagba, Meguro-ku, Tokyo 153-8505, Japan; Institute of Industrial Science, University of Tokyo, 4-6-1 Komagba, Meguro-ku, Tokyo 153-8505, Japan; (Physica status solidi. PSS. C, Conferences and critical reviews, v.7, 2003, pp.2606-2609)
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339
- Ultraclean etching of GaAs by HCl gas and <i>in situ</i> overgrowth of (Al)GaAs by molecular beam epitaxy
- Kadoya, Y.; Yoshida, T.; Noge, H.; Sakaki, H.; Quantum Transition Project, JST, Park Building, Komaba 4-7-6, Meguro-ku, Tokyo 153, Japan; Quantum Transition Project, JST, Park Building, Komaba 4-7-6, Meguro-ku, Tokyo 153, Japan; Quantum Transition Project, JST, Park Building, Komaba 4-7-6, Meguro-ku, Tokyo 153, Japan; Quantum Transition Project, JST, Park Building, Komaba 4-7-6, Meguro-ku, Tokyo 153, Japan; (Journal of applied physics, v.83, 1998, pp.567-576)
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340
- Mobility enhancement over universal mobility in (100) silicon nanowire gate-all-around MOSFETs with width and height of less than 10nm range
- Chen, Jiezhi; Saraya, Takuya; Hiramoto, Toshiro; ; (VLSI Technology (VLSIT), 2010 Symposium on, v.2010, 2010, pp.175-176)
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