검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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- Solution-processed inorganic <i>p</i>-channel transistors: Recent advances and perspectives
- Liu, Ao; Zhu, Huihui; Noh, Yong-Young; Corresponding author.; (Materials science & engineering. a review journal. R, Reports, v.135, 2019, pp.85-100)
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- Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors
- Kim, Taikyu; Jeong, Jae Kyeong; Department of Electronic Engineering Hanyang University Seoul 04763 Republic of Korea; Department of Electronic Engineering Hanyang University Seoul 04763 Republic of Korea; (Physica status solidi. PSS-RRL. Rapid Research Letters, v.16, 2022, pp.2100394)
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- METHOD TO ACHIEVE CMOS ROX ISOLATION USING LIFT-OFF FOR SELF-ALIGNING IMPLANTED AREAS
- ; ; (IBM technical disclosure bulletin, v.28, 1986, pp.4961-4964)
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34
- High‐performance vacuum‐processed metal oxide thin‐film transistors: A review of recent developments
- Kim, Hee Jun; Park, Kyungho; Kim, Hyun Jae; School of Electrical and Electronic Engineering Yonsei University Seoul Republic of Korea; School of Electrical and Electronic Engineering Yonsei University Seoul Republic of Korea; School of Electrical and Electronic Engineering Yonsei University Seoul Republic of Korea; (Journal of the Society for Information Display, v.28, 2020, pp.591-622)
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35
- Molecule Charge Transfer Doping for p‐Channel Solution‐Processed Copper Oxide Transistors
- Liu, Ao; Zhu, Huihui; Noh, Yong‐ Young; Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea; Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea; Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Gyeongbuk, 37673, Republic of Korea; (Advanced functional materials, v.30, 2020, pp.2002625)
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- Nonvolatile memory and logic devices using 2D Transition metal dichalcogenides heterojunction
- 박샘
- Graduate School, Yonsei University, 국내박사, xviii, 89 p., 2022
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37
- 0.86-nm CET Gate Stacks With Epitaxial<tex> $hboxGd_2hboxO_3$</tex>High-<tex> $k$</tex>Dielectrics and FUSI NiSi Metal Electrodes
- Gottlob, H.D.B.; Echtermeyer, T.; Schmidt, M.; Mollenhauer, T.; Efavi, J.K.; Wahlbrink, T.; Lemme, M.C.; Czernohorsky, M.; Bugiel, E.; Fissel, A.; Osten, H.J.; Kurz, H.; Adv. Micro-Electron. Center, Aachen; (IEEE electron device letters : a publication of the IEEE Electron Devices Society, v.27, 2006, pp.814-816)
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- h-BN-assisted Metal Contact Transfer to InSe for Two-Dimensional Multifunctional Electronic Devices
- Wei 尉, Chijun 驰 俊; Jiazila 努, Nuertai 尔 泰·加孜拉; Liu 刘 , Xuanye 轩 冶; Song 宋, Peng 鹏 ; Gao 高, Hui 辉 ; Sun 孙 , Jiequn 杰群; Bao 鲍 , Lihong 丽 宏; Lin 林, Xiao 晓 ; Gao 高, Hong-Jun 鸿 钧 ; (Chinese physics letters = 中國物理快報, v.41, 2024, pp.128501)
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- Surface Passivation Treatment to Improve Performance and Stability of Solution‐Processed Metal Oxide Transistors for Hybrid Complementary Circuits on Polymer Substrates
- Kang, Moon Hyo; Armitage, John; Andaji‐ Garmaroudi, Zahra; Sirringhaus, Henning; Optoelectronics Group Cavendish Laboratory University of Cambridge J J Thomson Avenue Cambridge CB3 0HE UK; Optoelectronics Group Cavendish Laboratory University of Cambridge J J Thomson Avenue Cambridge CB3 0HE UK; Optoelectronics Group Cavendish Laboratory University of Cambridge J J Thomson Avenue Cambridge CB3 0HE UK; Optoelectronics Group Cavendish Laboratory University of Cambridge J J Thomson Avenue Cambridge CB3 0HE UK; (Advanced science, v.8, 2021, pp.2101502)
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- Solution-processed semiconductors for next-generation photodetectors
- Garcí a de Arquer, F. Pelayo; Armin, Ardalan; Meredith, Paul; Sargent, Edward H.; Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada.; School of Mathematics and Physics, The University of Queensland, St Lucia Campus, Brisbane 4072, Australia.; School of Mathematics and Physics, The University of Queensland, St Lucia Campus, Brisbane 4072, Australia.; Department of Physics, Swansea University, Singleton Park, Swansea SA2 8PP, Wales, UK.; Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario M5S 1A4, Canada.; (Nature reviews. Materials, v.2, 2017, pp.16100)
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