검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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51
- Van der Waals integration of high-κ perovskite oxides and two-dimensional semiconductors
- Yang, Allen Jian; Han, Kun; Huang, Ke; Ye, Chen; Wen; Zhu, Ruixue; Zhu, Rui; Xu, Jun; Yu, Ting; Gao, Peng; Xiong, Qihua; Renshaw Wang, X.; ; (Nature electronics, v.5, 2022, pp.233-240)
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52
- Physical Unclonable Function Using Carbon Resistor
- Soga, Ryota; Kang, Hyunho; Advanced Course of Electrical and Electronic Engineering; National Institute of Technology,Tokyo College,Department of Electronic Engineering,Tokyo,Japan; (Consumer Electronics (GCCE), 2020 IEEE 9th Global Conference on, v.2020, 2020, pp.559-561)
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53.
- Solution-processed thin-film-transistors for ultra-flexible electronics
- 허재상
- 중앙대학교 대학원, 국내박사, xix, 180 p., 2018
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54
- (Invited) Wide Bandgap Heterojunctions on Crystalline Silicon
- Sturm, James; Avasthi, Sushobhan; Nagamatsu, Ken; Jhaveri, Janam; McClain, William E.; Man, Gabriel; Kahn, Antoine; Schwartz, Jeffrey; Wagner, Sigurd; aPrinceton University; aPrinceton University; aPrinceton University; aPrinceton University; aPrinceton University; aPrinceton University; aPrinceton University; aPrinceton University; aPrinceton University; (ECS transactions, v.58, 2013, pp.97-105)
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55
- Advancing metal-oxide-semiconductor theory: Steady-state nonequilibrium conditions
- Passlack, M.; Hong, M.; Schubert, E. F.; Zydzik, G. J.; Mannaerts, J. P.; Hobson, W. S.; Harris, T. D.; Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974; Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974; Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974; Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974; Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974; Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974; Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey 07974; (Journal of applied physics, v.81, 1997, pp.7647-7661)
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56.
- 용액 공정을 이용한 고이동도 p-형 NiO 소자개발에 관한 연구
- 이예림
- 광운대학교 일반대학원, 국내석사, xi, 59p, 2024
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57
- Dual carrier traps related hysteresis in organic inverters with polyimide-modified gate-dielectrics
- Chou, Wei-Yang; Yeh, Bo-Liang; National Cheng Kung University Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, , Tainan 701, Taiwan; National Cheng Kung University Institute of Electro-Optical Science and Engineering, Center for Micro/Nano Science and Technology, Advanced Optoelectronic Technology Center, , Tainan 701, Taiwan; (Applied physics letters, v.96, 2010, pp.153302)
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58
- Process integration and future outlook of 2D transistors
- O’Brien, Kevin P.; Naylor, Carl H.; Dorow, Chelsey; Maxey, Kirby; Penumatcha, Ashish Verma; Vyatskikh, Andrey; Zhong, Ting; Kitamura, Ande; Lee, Sudarat; Rogan, Carly; Mortelmans, Wouter; Kavrik, Mahmut Sami; Steinhardt, Rachel; Buragohain, Pratyush; Dutta, Sourav; Tronic, Tristan; Clendenning, Scott; Fischer, Paul; Putna, Ernisse S.; Radosavljevic, Marko; Metz, Matt; Avci, Uygar; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research, Hillsboro, OR USA; Intel Corporation, Components Research,; (Nature communications, v.14, 2023, pp.6400)
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59
- Solution-processed ambipolar organic field-effect transistors and inverters
- Meijer, E. J.; De Leeuw, D. M.; Setayesh, S.; Veenendaal, E. Van; Huisman, B. -H.; Blom, P. W. M.; Hummelen, J. C.; Scherf, U.; Klapwijk, T. M.; [1] Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands [2] Delft University of Technology, Faculty of Applied sciences, Department of NanoScience, Lorentzweg 1, 2628 CJ Delft, The Netherlands; Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands; Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands; Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands; Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands; Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands; Materials Science Center, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands; Bergische Universitat Wuppertal, Department of Chemistry, Gauss-strasse 20, D-42097 Wuppertal, Germany; Delft University of Technology, Faculty of Applied sciences, Department of NanoScience, Lorentz; (Nature materials, v.2, 2003, pp.678-682)
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60.
- Electrical characteristics of SnOx transparent p-type semiconductor for thin film transistor applications
- 한상진
- Seoul National University, 국내박사, xiv, 130 pages, 2016
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