검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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631.
- Heat Transfer Mechanisms in Silicon Nanostructured Materials
- 유형석
- 포항공과대학교 일반대학원, 국내박사, 89, 2024
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632
- Nanoscale Etching: Dissolution of III-As and Ge in HCl/H<sub>2</sub>O<sub>2</sub> Solutions
- van Dorp, Dennis H.; Weinberger, David; Van Wonterghem, Simon; Arnauts, Sophia; Strubbe, Katrien; Holsteyns, Frank; De Gendt, Stefan; ; (ECS meeting abstracts, v.ma2015, 2015, pp.1047-1047)
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633
- <I>Ab-Initio</I>  Studies of Acceptor Impurities and  Stability of  Complexes in Ge
- Emmanuel, Igumbor; Mapasha, Edwin R; Richard, Andrew C; Meyer, Walter E; ; (ECS meeting abstracts, v.ma2016, 2016, pp.1798-1798)
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634
- Monolithic Integration of Gesn on Si for IR Camera Demonstration
- Oehme, Michael; Yu, Zili; Wanitzek, Maurice; Epple, Steffen; Schad, Lena; Hack, Michael; Burghartz, Joachim; Schwarz, Daniel; Kaschel, Mathias; ; (ECS meeting abstracts, v.ma2022, 2022, pp.1169-1169)
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635
- A Computational Study of Tunneling Field-Effect Transistors: Challenges and Design Optimizations
- Liang, Gengchiau; Low, Kain Lu; ; (ECS meeting abstracts, v.ma2016, 2016, pp.1959-1959)
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636
- A Germanium Based Quantum Well Complementary Metal-Oxide-Semiconductor Transistor
- Li, Yucheng; Zhang, Shiqi; Song, Jianjun; School of Electrical and Control Engineering, Xi’an University of Science and Technology, Xi’an, 710054, China; Key Laboratory of Wide Bandgap Semiconductors, School of Microelectronics, Xidian University, Xi’an, 710071, China; Key Laboratory of Wide Bandgap Semiconductors, School of Microelectronics, Xidian University, Xi’an, 710071, China; (Journal of nanoelectronics and optoelectronics, v.17, 2022, pp.1245-1255)
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