검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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61
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HfTiAlO dielectric as an alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices
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Lu, N.;
Li, H.-J.;
Peterson, J. J.;
Kwong, D. L.;
The University of Texas Microelectronics Research Center, R9950, , Austin, Texas 78758;
SEMATECH , Austin, Texas 78741;
SEMATECH , Austin, Texas 78741;
The University of Texas Microelectronics Research Center, R9950, , Austin, Texas 78758;
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62
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Numerical Study of a Highly Scaled Bulk MOSFET With Block Oxide and Source/Drain-Tied Structure
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Yi-Chuen Eng;
Jyi-Tsong Lin;
Chih-Hao Kuo;
Po-Hsieh Lin;
Yi-Hsuan Fan;
Hsuan-Hsu Chen;
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan;
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan;
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan;
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan;
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan;
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan;
(IEEE transactions on electron devices,
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63
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Gate contact materials in Si channel devices
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Wen, Huang-Chun;
Chambers, J.J.;
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64
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Discovery of Polar Semiconducting Scandium Nitride as an Infrared Plasmon and Phonon-Polaritonic Material
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Maurya Krishna;
Rao Dheemahi;
Acharya Shashidhara;
Rao Pavithra Rao;
Pillai Ashalatha;
Selvaraja Shankar;
Garbrecht Magnus;
Saha Bivas;
Jawaharlal Nehru Centre for Advanced Scientific Research;
Jawaharlal Nehru Centre for Advanced Scientific Research;
Jawaharlal Nehru Centre for Advanced Scientific Research;
Indian Institute of Science;
The University of Sydney;
Indian Institute of Science;
The University of Sydney;
Jawaharlal Nehru Centre for Advanced Scientific Research;
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65
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On-chip process variation-tracking through an all-digital monitoring architecture
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Karimiyan Alidash, H.;
Calimera, A.;
Macii, A.;
Macii, E.;
Poncino, M.;
Fac. of Eng., Univ. of Kashan, Kashan, Iran;
Dept. of Control & Comput. Eng., Politec. di Torino, Torino, Italy;
Dept. of Control & Comput. Eng., Politec. di Torino, Torino, Italy;
Dept. of Control & Comput. Eng., Politec. di Torino, Torino, Italy;
Dept. of Control & Comput. Eng., Politec. di Torino, Torino, Italy;
(IET circuits, devices & systems,
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66
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A hybrid CMOS-imager with a solution-processable polymer as photoactive layer
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Baierl, Daniela;
Pancheri, Lucio;
Schmidt, Morten;
Stoppa, David;
Dalla Betta, Gian-Franco;
Scarpa, Giuseppe;
Lugli, Paolo;
Institute for Nanoelectronics, Technische Universit채t M체nchen, 80333 Munich, Germany.;
Fondazione Bruno Kessler, 38123 Trento, Italy.;
Institute for Nanoelectronics, Technische Universit채t M체nchen, 80333 Munich, Germany.;
Fondazione Bruno Kessler, 38123 Trento, Italy.;
Department of Information Engineering and Computer Science, University of Trento, 38123 Trento, Italy.;
Institute for Nanoelectronics, Technische Universit채t M체nchen, 80333 Munich, Germany.;
Institute for Nanoelectronics, Technische Universit채t M체nchen, 80333 Munich, Germany.;
(Nature communications,
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68
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Metal oxides for optoelectronic applications
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Yu, Xinge;
Marks, Tobin J.;
Facchetti, Antonio;
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA;
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Opto-electronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China;
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA;
Department of Chemistry and the Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, Illinois 60208, USA;
Polyera Corporation, 8045 Lamon Avenue, Skokie, Illinois 60077, USA;
(Nature materials,
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69
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Designing logic functions using an electron waveguide Y-branch switch
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Palm, Thomas;
Thylé
n, Lars;
The Laboratory of Photonics and Microwave Engineering, Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista, Sweden;
The Laboratory of Photonics and Microwave Engineering, Department of Electronics, Royal Institute of Technology, Electrum 229, S-164 40 Kista, Sweden;
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70
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Doping, Contact and Interface Engineering of Two‐Dimensional Layered Transition Metal Dichalcogenides Transistors
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Zhao, Yuda;
Xu, Kang;
Pan, Feng;
Zhou, Changjian;
Zhou, Feichi;
Chai, Yang;
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China;
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China;
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China;
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China;
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China;
Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China;
(Advanced functional materials,
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