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701
- Epitaxial growth of CuInS2 on sulphur terminated Si(001)
- Hahn, Th.; Metzner, H.; Plikat, B.; Seibt, M.; II. Physikalisches Institut, Universitä t Gö ttingen, D-37073 Gö ttingen, Germany; II. Physikalisches Institut, Universitä t Gö ttingen, D-37073 Gö ttingen, Germany; IV. Physikalisches Institut, Universitä t Gö ttingen, D-37073 Gö ttingen, Germany; IV. Physikalisches Institut, Universitä t Gö ttingen, D-37073 Gö ttingen, Germany; (Applied physics letters, v.72, 1998, pp.2733-2735)
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702
- Adsorption of Zn on the GaAs(001)-(2×4) surface
- Ohtake, Akihiro; Hanada, Takashi; Yasuda, Tetsuji; Yao, Takafumi; Joint Research Center for Atom Technology (JRCAT), Tsukuba 305-0046, Japan; Joint Research Center for Atom Technology (JRCAT), Tsukuba 305-0046, Japan; Joint Research Center for Atom Technology (JRCAT), Tsukuba 305-0046, Japan; Joint Research Center for Atom Technology (JRCAT), Tsukuba 305-0046, Japan; (Applied physics letters, v.74, 1999, pp.2975-2977)
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703
- Initial etching of GaAs (001) during H2 plasma cleaning
- Robey, S. W.; Sinniah, K.; National Institute of Standards and Technology, Gaithersburg, Maryland 20899; Calvin College, Department of Chemistry and Biochemistry, Grand Rapids, Michigan 49546; (Journal of applied physics, v.88, 2000, pp.2994-2998)
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704
- First principles study on InP (001)-(2 × 4) surface oxidation
- Santosh, K. C.; Wang, Weichao; Dong, Hong; Xiong, Ka; Longo, Roberto C.; Wallace, Robert M.; Cho, Kyeongjae; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson 1 , Texas 75080, USA; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson 1 , Texas 75080, USA; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson 1 , Texas 75080, USA; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson 1 , Texas 75080, USA; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson 1 , Texas 75080, USA; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson 1 , Texas 75080, USA; Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson 1 , Texas 75080, USA; (Journal of applied physics, v.113, 2013, pp.103705)
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705
- Accelerated molecular dynamics study of theGaAs(001)β2(2×4)/c(2×8)surface
- Lin, Yangzheng; Fichthorn, Kristen A.; ; (Physical review. B, Condensed matter and materials physics, v.86, 2012, pp.165303)
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706
- Growth of BaF2 and of BaF2/SrF2 layers on (001)-oriented GaAs
- Clemens, H.; Stromberger, U.; Weilguni, P. C.; Bauer, G.; Institut fü r Physik, Montanuniversitä t Leoben, A-8700 Leoben, Austria; Institut fü r Physik, Montanuniversitä t Leoben, A-8700 Leoben, Austria; Institut fü r Physik, Montanuniversitä t Leoben, A-8700 Leoben, Austria; Institut fü r Physik, Montanuniversitä t Leoben, A-8700 Leoben, Austria; (Journal of applied physics, v.66, 1989, pp.1680-1686)
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707
- Rainbow scattering of CO and N2 from LiF(001)
- Kondo, Takahiro; Kato, Hiroyuki S.; Yamada, Taro; Yamamoto, Shigehiko; Kawai, Maki; Institute of Chemical and Physical Research (RIKEN) Surface Chemistry Laboratory, , 2-1 Hirosawa, Wako, Saitama 351-0198, Japan; Institute of Chemical and Physical Research (RIKEN) Surface Chemistry Laboratory, , 2-1 Hirosawa, Wako, Saitama 351-0198, Japan; Institute of Chemical and Physical Research (RIKEN) Surface Chemistry Laboratory, , 2-1 Hirosawa, Wako, Saitama 351-0198, Japan; National Institute of Advanced Industrial Science and Technology (AIST) , AIST Tsukuba Central 2, 1-1-1 Umezono, Tsukuba 305-8568, Japan; Institute of Chemical and Physical Research (RIKEN) Surface Chemistry Laboratory, , 2-1 Hirosawa, Wako, Saitama 351-0198, Japan and Department of Advanced Materials Science, Graduate School of Frontier Sciences, , Kashiwa, Chiba 277-8561, Japan; (The Journal of chemical physics, v.122, 2005, pp.244713)
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708
- Ab initiostudies on theβ−SiC(001)−(5×2)surface
- Lu, Wenchang; Krü ger, Peter; Pollmann, Johannes; ; (Physical review. B, Condensed matter and materials physics, v.61, 2000, pp.2680-2687)
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709
- Surface band structure of MBE-grown GaAs(001)-2 ？ 4
- Larsen, P K; van der Veen, J D; Philips Res. Labs., Eindhoven, Netherlands; Philips Res. Labs., Eindhoven, Netherlands; (Journal of physics. C, Solid state physics, v.15, 1982, pp.L431-L435)
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710
- Surface electronic structure of InSb(001)-c(8x2)
- Walczak, L.; Goryl, G.; Valbuena, M.A.; Vobornik, I.; Tejeda, A.; Taleb-Ibrahimi, A.; Kolodziej, J.J.; Segovia, P.; Michel, E.G.; ; (Surface science, v.608, 2013, pp.22-30)
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