검색어 : 통합검색[001.2]
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721
- InP(001)-( <tex> $ 2 times 1$</tex> ) Surface: A Hydrogen Stabilized Structure
- Schmidt, W. G.; Hahn, P. H.; Bechstedt, F.; Esser, N.; Vogt, P.; Wange, A.; Richter, W.; ; (Physical review letters, v.90, 2003, pp.126101)
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722
- Antiphase boundaries and rotation domains in In2O3(001) films grown on yttria-stabilized zirconia (001)
- Hu, Y. L.; Rind, E.; Speck, J. S.; ; (Small-angle scattering; (SAS2012), v.2014, 2014, pp.443-448)
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723
- Comparative study of the adsorption of C<SUB>2</SUB>H<SUB>4</SUB> on the Si(001) and Ge(001) surfaces
- Miotto, R.; Ferraz, A. C.; Srivastava, G. P.; ; (European conference on surface science, v.2002, 2002, pp.12-17)
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724
- Studying the near-room temperature insulator-to-metal switching in ultrathin VO2 films on (001) TiO2
- Slusar, Tetiana; Kim, Bitna; Roh, Tae Moon; Kim, Hyun-Tak; Electronics and Telecommunications Research Institute, Semiconductor Materials Components Equipment Technology Center, Daejeon, Republic of Korea; Electronics and Telecommunications Research Institute, Semiconductor Materials Components Equipment Technology Center, Daejeon, Republic of Korea; Electronics and Telecommunications Research Institute, Semiconductor Materials Components Equipment Technology Center, Daejeon, Republic of Korea; Electronics and Telecommunications Research Institute, Semiconductor Materials Components Equipment Technology Center, Daejeon, Republic of Korea; (Electronics, Information, and Communication (ICEIC), 2022 International Conference on, v.2022, 2022, pp.1-4)
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725
- Accelerated molecular dynamics study of theGaAs(001)β2(2×4)/c(2×8)surface
- Lin, Yangzheng; Fichthorn, Kristen A.; ; (Physical review. B, Condensed matter and materials physics, v.86, 2012, pp.165303)
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726
- Special Issue Ceramics Integration. Preparation of Epitaxial YSZ Thin Film Deposited on SiO2/Si(001) at Room Temperature by Pulsed Laser Deposition(PLD).
- ISHIGAKI, Hirokazu; YAMADA, Tomoaki; WAKIYA, Naoki; SINOZAKI, Kazuo; MIZUTANI, Nobuyasu; Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology; Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology; Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology; Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology; Department of Metallurgy and Ceramic Science, Tokyo Institute of Technology; (日本セラミックス協會學術論文誌 = Journal of the Ceramic Society of Japan, v.110, 2002, pp.333-337)
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727
- A real space investigation of the dimer defect structure of Si(001)‐(2times8)
- Niehus, H.; Kö hler, U. K.; Copel, M.; Demuth, J. E.; IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.; IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.; IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.; IBM T.J. Watson Research Center, Yorktown Heights, NY 10598, U.S.A.; (Journal of microscopy, v.152, 1988, pp.735-742)
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728
- In situ observation of a high-temperature Si(001) surface during SiH<SUB>2</SUB>Cl<SUB>2</SUB> exposure by photoelectron spectroscopy
- Hori, Toyokazu; Sakamoto, Hitoshi; Takakuwa, Yuji; Enta, Yoshiharu; Kato, Hiroo; Miyamoto, Nobuo; ; (Thin solid films, v.343, 1999, pp.354-360)
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729
- Simulated annealing method for molecular constants calculation: the electronic transition A<sup>2</sup>Σ<sup>+</sup>-<i>X</i><sup>2</sup>Π of N<sub>2</sub>O<sup>+</sup> radical 000-000 and 001-001 band cases
- Martins, A. S.; Fellows, C. E.; Departamento de Fí sica, Instituto de Ciê ncias Exatas - ICEx, Universidade Federal Fluminense, Volta Redonda, Brazil; Departamento de Fí sica, Instituto de Ciê ncias Exatas - ICEx, Universidade Federal Fluminense, Volta Redonda, Brazil; (Molecular physics, v.119, 2021, pp.e1881636)
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730
- Epitaxial structure SrBi2Ta2O9<116> /SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory
- Migita, S.; Sakamaki, K.; Ota, H.; Xiong, S. -B.; Tarui, Y.; Sakai, S.; National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan; National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan,Nippon Precision Circuits. Inc., Tochigi, Japan; National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan; National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan; National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan; National Institute of Advanced Industrial Science and Technology, Ibaraki, Japan; (Integrated ferroelectrics, v.40, 2001, pp.135-143)
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