검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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71
- A Spin-Capacitor with Paramagnetic Impurities Embedded in GaAs
- Saha, D.; Basu, D.; Bhattacharya, P.; ; (Device Research Conference, 2008, v.2008, 2008, pp.165-166)
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72
- Ferroelectric Nitride Heterostructures on CMOS Compatible Molybdenum for Synaptic Memristors
- Wang, Ping; Wang, Ding; Mondal, Shubham; Hu, Mingtao; Wu, Yuanpeng; Ma, Tao; Mi, Zetian; Department of Electrical Engineering and Computer Science , University of Michigan , Ann Arbor , Michigan 48109 , United States; Department of Electrical Engineering and Computer Science , University of Michigan , Ann Arbor , Michigan 48109 , United States; Department of Electrical Engineering and Computer Science , University of Michigan , Ann Arbor , Michigan 48109 , United States; Department of Electrical Engineering and Computer Science , University of Michigan , Ann Arbor , Michigan 48109 , United States; Michigan Center for Materials Characterization , University of Michigan , Ann Arbor , Michigan 48109 , United States; (ACS applied materials & interfaces, v.15, 2023, pp.18022-18031)
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73
- Doping, Contact and Interface Engineering of Two‐Dimensional Layered Transition Metal Dichalcogenides Transistors
- Zhao, Yuda; Xu, Kang; Pan, Feng; Zhou, Changjian; Zhou, Feichi; Chai, Yang; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China; (Advanced functional materials, v.27, 2017, pp.1603484)
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74
- Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications
- Sun, Bingqi; Xu, Jing; Zhang, Min; He, Longfei; Zhu, Hao; Chen, Lin; Sun, Qingqing; Zhang, David Wei; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China; (Crystals, v.8, 2018, pp.252)
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75
- 반데르발스 2차원 반도체소자의 응용과 이슈
- 임성일; 반데르발스 물질연구센터; (진공 이야기 = Vacuum magazine, v.5, 2018, pp.18-22)
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76
- Selenium-alloyed tellurium oxide for amorphous p-channel transistors
- Liu, Ao; Kim, Yong-Sung; Kim, Min Gyu; Reo, Youjin; Zou, Taoyu; Choi, Taesu; Bai, Sai; Zhu, Huihui; Noh, Yong-Young; ; (Nature, v.629, 2024, pp.798-802)
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77
- <i>(Invited) </i>New p-Type Oxide Semiconductor with High Hole Mobility over 7 cm<sup>2</sup>/Vs Formed By Solution Process
- Cho, Sung Haeng; Nam, Sooji; Hwang, Chi-Sun; Lee, Su-Jae; aETRI; aETRI; aETRI; aETRI; (ECS meeting abstracts, v.ma2018, 2018, pp.1202-1202)
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78
- Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices
- Li, Huaping; Liu, Hongyu; Tang, Yifan; Guo, Wenmin; Zhou, Lili; Smolinski, Nina; ; (ACS applied materials & interfaces, v.8, 2016, pp.20527-20533)
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79
- Dummy-Gate Structure to Improve Turn-on Speed of Silicon-Controlled Rectifier (SCR) Device for Effective Electrostatic Discharge (ESD) Protection
- Ker, Ming-Dou; Hsu, Kuo-Chun; Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University; Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University; (Japanese journal of applied physics. Part 2, Letters, v.42, 2003, pp.L1366-L1368)
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80
- INTRAORAL DETECTORS
- Sanderink, Gerard C.H.; Miles, Dale A.; ; (Dental clinics of North America, v.44, 2000, pp.249-255)
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