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791
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Adsorption of V Group Metals and Oxygen on Silicon Surface Si(001)2x1. 2. Interaction of Atomic Oxygen with As/Si(001) Surface
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Afanasieva, T. V.;
Koval, I. F.;
Nakhodkin, N. G.;
Pyatnisky, M. Y.;
;
(Ukrainian journal of physics = Ukraïns'kyj fizyčnyj žurnal,
v.45,
2000,
pp.717-721)
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792
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Structure of Vanadium Films on SiO$_2$(001), MgO(100), Al$_2$O$_3$(0001), SrTiO$_3$(100) Substrates and Features of Their Thermal Oxidation
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Orlov, A. K.;
Kruhlov, I. O.;
Voloshko, S. M.;
Kotenko, I. E.;
Sidorenko, S. I.;
Ishikawa, T.;
;
(Metallofizika i nove&n.ibreve;shie tekhnologii,
v.40,
2018,
pp.777-794)
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793
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Sm-MnO /TiO2-{001} with preferentially exposed anatase {001} facet for selective catalytic reduction of NO with NH3
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He, Xu;
Zhu, Fujie;
Dong, Lili;
Guo, Haiwei;
Liu, Xiaoyao;
Ren, Gengbo;
Ma, Xiaodong;
;
(Applied catalysis. A, General,
v.664,
2023,
pp.119353)
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794
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Atomic Structure of the GaAs(001)-?(2 x 4) Surface
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Srivastava, G. P.;
Jenkins, S. J.;
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(Structure of surfaces,
v.1997,
1997,
pp.219-222)
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795
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Second-Harmonic Spectroscopy of the SiO<SUB>2</SUB>/Si(001) Interface
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Dadap, J. I.;
Hu, X. F.;
Anderson, M. H.;
Downer, M. C.;
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(Physics and chemistry of SiO2 and the Si-SiO2 interface,
v.1996,
1996,
pp.406-417)
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796
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Atomic-Order Planarization of Ultrathin SiO<SUB>2</SUB>/Si(001) Interfaces
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Niwa, M.;
Kouzaki, T.;
Okada, K.;
Udagawa, M.;
;
(Solid state devices and materials,
v.1994,
1994,
pp.388-394)
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797
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Structure of CVD Deposited Diamond (001) 2x1 Surface
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Kitabatake, M.;
Deguchi, M.;
Hirao, T.;
;
(New diamond science and technology,
v.1994,
1994,
pp.469-472)
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798
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Early nucleation on the Si(001)-2 x 1 surface
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Π
, T.-W.;
Ouyang, C.-P.;
Wen, J.-F.;
Tien, L.-C.;
Hwang, J.;
Cheng, C.-P.;
Wertheim, G. K.;
;
(Atomic-scale surface designing for functional low-dimensional materials,
v.2002,
2002,
pp.327-331)
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799
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Thin film silicon compound growth mechanisms: CrSi<SUB>2</SUB>/Si(001)
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Heck, C.;
Kusaka, M.;
Hirai, M.;
Iwami, M.;
;
(Proceedings of the 13th international vacuum congress and the 9th International conference on solid surfaces,
v.1996,
1996,
pp.94-97)
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800
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Chemical Bonding on GaAs(001) Surfaces Passivated Using SeS<SUB>2</SUB>
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Sun, J.;
Ju Seo, D.;
O'Brien, W. L.;
Himpsel, F. J.;
;
(Infrared applications of semiconductors,
v.1998,
1998,
pp.589-594)