검색어 : 통합검색[Metal oxide semiconductors Complementary.]
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- Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration
- Saha, H.; Chaudhuri, C.; ; (Defence science journal, v.59, 2009, pp.557-567)
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- VARIABLE ARGUMENT LOGIC GATE USING COMPLEMENTARY METAL-OXIDE SEMICONDUCTORS
- Lowden, R. P; ; (IBM technical disclosure bulletin, v.16, 1973, pp.400-401)
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- 0.1μm complementary metal-oxide-semiconductors and beyond
- Toriumi, Akira; ; (Journal of vacuum science & technology. processing, measurement, and phenomena : an official journal of the American Vacuum Society. B, Microelectronics and nanometer structures, v.14, 1996, pp.4020)
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- Lux transfer: Complementary metal oxide semiconductors versus charge-coupled devices
- Janesick, James; ; (Optical engineering : the journal of the Society of Photo-optical Instrumentation Engineers, v.41, 2002, pp.1203)
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- Complementary growth of 2D transition metal dichalcogenide semiconductors on metal oxide interfaces
- Wickramasinghe, Thushan E.; Jensen, Gregory; Thorat, Ruhi; Lindquist, Miles; Aleithan, Shrouq H.; Stinaff, Eric; Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University 1 , Athens, Ohio 45701, USA; Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University 1 , Athens, Ohio 45701, USA; Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University 1 , Athens, Ohio 45701, USA; Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University 1 , Athens, Ohio 45701, USA; Department of Physics, College of Science, King Faisal University 2 , Al-Ahsa 31982, Saudi Arabia; Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University 1 , Athens, Ohio 45701, USA; (Applied physics letters, v.117, 2020, pp.213104)
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- Novel Implantation Method to Improve Machine-Model Electrostatic Discharge Robustness of Stacked N-Channel Metal-Oxide Semiconductors (NMOS) in Sub-Quarter-Micron Complementary Metal-Oxide Semiconductors (CMOS) Technology
- Ker, Ming-Dou; Hsu, Hsin-Chyh; Peng, Jeng-Jie; Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.; Nanoelectronics and Gigascale Systems Laboratory, Institute of Electronics, National Chiao-Tung University, 1001 Ta-Hsueh Road, Hsinchu, Taiwan, R.O.C.; ESD Protection Technology Department, SoC Technology Center, Industrial Technology Research Institute (ITRI), Bldg. 14, 195, Sec. 4, Chung-Hsing Rd., Chutung, Hsinchu, Taiwan, R.O.C.; (Japanese journal of applied physics. Part 2, Letters, v.41, 2002, pp.L1288-L1290)
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- High-speed hybrid complementary ring oscillators based on solution-processed organic and amorphous metal oxide semiconductors
- Wei, Xiaozhu; Kumagai, Shohei; Makita, Tatsuyuki; Tsuzuku, Kotaro; Yamamura, Akifumi; Sasaki, Mari; Watanabe, Shun; Takeya, Jun; ; (Communications materials, v.4, 2023, pp.4)
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- Calculating and analyzing time delay in zigzag graphene nanoscrolls based complementary metal-oxide-semiconductors
- Sadeqian, Ali; Ahmadi, Mohammad Taghi; Bodaghzadeh, Morteza; Abazari, Amir Musa; ; (Scientific reports, v.14, 2024, pp.9009)
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- Hexadecimal to binary conversion using multi-input floating gate complementary metal oxide semiconductors
- Osseily, Hassan Amine; Haidar, Ali Massoud; ; (Applied Research in Computer Science and Engineering (ICAR), 2015 International Conference on, v.2015, 2015, pp.1-6)
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- Octal to binary conversion using multi-input floating gate complementary metal oxide semiconductors
- Osseily, H. A.; Haidar, A. M.; ; (Signals, Circuits and Systems (ISSCS), 2011 10th International Symposium on, v.2011, 2011, pp.1-4)
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